| Item | Symbol | Value | |
|---|---|---|---|
| Light Emitting Side | Forward Current | IF | 40mA |
| Reverse Voltage | VR | 3V | |
| Power Dissipation | PD | 75mW | |
| Light Receiving Side | C-E Voltage | VCEO | 30V |
| E-C Voltage | VECO | 5V | |
| Collector Current | IC | 20mA | |
| Collector Power Dissipation | PC | 100mW | |
| Operating Temperature 1 | TOPR | -25~+85 °C | |
| Storage Temperature | TSTG | -40~+85 °C | |
| Soldering Temperature | TSOL | 260 °C | |
1: Non Dew
| Item | Symbol | Conditions | Min | Typ | Max | Unit | ||
|---|---|---|---|---|---|---|---|---|
| Light Emitting Side | Forward Current | VF | IF=20mA | – | – | 1.5 | V | |
| Reverse Voltage | IR | IF=5V | – | – | 10 | mA | ||
| Peak Wavelength | lP | IF=20mA | 940 | nm | ||||
| Light Receiving Side | Off-State Collector Current | ICEO | VCE=10V
IF=0mA |
– | – | 0.2 | mA | |
| Peak Wavelength | lP | – | 800 | nm | ||||
| Transmitting | On-State Collector Current | IC (on) | VCE=5V
IF=20mA |
0.5 | 2.0 | 15 | mA | |
| C-E Saturation Voltage | VC (sat) | IF=20mA
IC=400mA |
– | – | 0.4 | V | ||
| Switching Time | Rise Time | tr | VCC=10V 2
IF=20mA RL=1kW |
– | 15 | – | ms | |
| Fall Time | tf | – | 15 | – | ms | |||
Note 2:
| Vibration Resistance | To withstand 10~55~10Hz, 1.5mm amplitude and 1 minute sweep time in X, Y and Z directions, each for 2 hours. |
| Shock Resistance | 294m/S2 (30G) or more. |
| Terminal No. | Signal |
|---|---|
| 1 | Anode |
| 2 | Cathode |
| 3 | Collector |
| 4 | Emitter |
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Tolerance: ±0.3mm
Notes:
Part Side Measurement
Tolerance: ±0.1mm
| No. | Description | Qty. | Materials | Remarks |
|---|---|---|---|---|
| 1 | Case | 1 | PBT (G15%) | Flammability: UL94V-2 or more |
| 2 | Cover | 1 | PBT (G15%) | Flammability: UL94V-2 or more |
| 3 | Light Emitting Diode | 1 | – | GaAs Infrared Light Emitting Diode |
| 4 | Emitter | 1 | – | Photo Transistor |