Item | Symbol | Value | |
---|---|---|---|
Light Emitting Side | Forward Current | IF | 40mA |
Reverse Voltage | VR | 3V | |
Power Dissipation | PD | 75mW | |
Light Receiving Side | C-E Voltage | VCEO | 30V |
E-C Voltage | VECO | 5V | |
Collector Current | IC | 20mA | |
Collector Power Dissipation | PC | 100mW | |
Operating Temperature 1 | TOPR | -25~+85 °C | |
Storage Temperature | TSTG | -40~+85 °C | |
Soldering Temperature | TSOL | 260 °C |
1: Non Dew
Item | Symbol | Conditions | Min | Typ | Max | Unit | ||
---|---|---|---|---|---|---|---|---|
Light Emitting Side | Forward Current | VF | IF=20mA | – | – | 1.5 | V | |
Reverse Voltage | IR | IF=5V | – | – | 10 | mA | ||
Peak Wavelength | lP | IF=20mA | 940 | nm | ||||
Light Receiving Side | Off-State Collector Current | ICEO | VCE=10V
IF=0mA |
– | – | 0.2 | mA | |
Peak Wavelength | lP | – | 800 | nm | ||||
Transmitting | On-State Collector Current | IC (on) | VCE=5V
IF=20mA |
0.5 | 2.0 | 15 | mA | |
C-E Saturation Voltage | VC (sat) | IF=20mA
IC=400mA |
– | – | 0.4 | V | ||
Switching Time | Rise Time | tr | VCC=10V 2
IF=20mA RL=1kW |
– | 15 | – | ms | |
Fall Time | tf | – | 15 | – | ms |
Note 2:
Vibration Resistance | To withstand 10~55~10Hz, 1.5mm amplitude and 1 minute sweep time in X, Y and Z directions, each for 2 hours. |
Shock Resistance | 294m/S2 (30G) or more. |
Terminal No. | Signal |
---|---|
1 | Anode |
2 | Cathode |
3 | Collector |
4 | Emitter |
No. | Description | Qty. | Materials | Remarks |
---|---|---|---|---|
1 | Case | 1 | PBT (G15%) | Flammability: UL94V-2 or more |
2 | Light Emitting Diode | 1 | – | GaAs Infrared Light Emitting Diode |
3 | Detector | 1 | – | Photo Transistor |